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FDA8440 N-Channel PowerTrench(R) MOSFET
March 2008
FDA8440 N-Channel PowerTrench(R) MOSFET
40V, 100A, 2.1m
Features
* RDS(on) = 1.46m (Typ.)@ VGS = 10V, ID = 80A * Qg(tot) = 345nC (Typ.)@ VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * 160A Guarantee for 2 sec * RoHS Compliant
tm
Application
* Automotive Engine Control * Powertrain Management * Motors, Solenoids * Electronic Steering * Integrated Starter/ Alternator * Distributed Power Architectures and VRMs * Primary Switch for 12V systems
D
G
TO-3PN
G DS S
C
MOSFET Maximum Ratings T
Symbol
VDSS VGSS Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC = 155oC)
= 25oC unless otherwise noted
Parameter
Ratings
40 20 100
o
Units
V V A A A mJ W W/oC
oC
ID
- Continuous (TA = 25 C, VGS = 10V, RJA = 40 C/W ) - Pulsed
o
30 500 (Note 1) 1682 306 2.04 -55 to +175
EAS PD TJ, TSTG
Single Pulsed Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 2) 0.49 40
o o
C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FDA8440 Rev. A2
FDA8440 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information
Device Marking
FDA8440
Device
FDA8440
Package
TO-3PN
TC = 25C unless otherwise noted
Reel Size
N/A
Tape Width
N/A
Quantity
30units
Electrical Characteristics
Symbol
Off Characteristics BVDSS IDSS IGSS VGS(th) RDS(on)
Parameter
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current Gate to Source Threshold Voltage Static Drain-Source On-Resistance
Conditions
VGS = 0V, ID = 250A VDS = 32V VGS = 0V VGS = 20V VDS = VGS, ID = 250A VGS = 4.5V, ID = 80A VGS = 10V, ID = 80A VGS = 10V, ID = 80A, TC = 175oC TC = 150oC
Min
40 ---1 ----
Typ
-----1.56 1.46 2.82
Max Units
-1 250 100 3 2.2 2.1 4.1 m V A A nA V
On Characteristics
Dynamic Characteristics Ciss Coss Crss RG Qg(tot) Qg(2) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge
(VGS = 10V)
-VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 20V ID = 80A Ig = 1.0mA ---------
18600 1840 1400 1.1 345 32.5 49 16.5 74
24740 2450 2100 -450 -----
pF pF pF nC nC nC nC nC
Switching Characteristics tON td(on) tr td(off) tf tOFF Turn-On Time
-VDD = 20V,ID = 80A VGS = 10V, RGEN = 7 -----ISD = 80A ISD = 40A ISD = 75A, dISD/dt = 100A/s ISD = 75A, dISD/dt = 100A/s -----
175 43 130 435 290 730 --59 77
360 95 275 875 590 1470 1.25 1.0 ---
ns ns ns ns ns ns V V ns nC
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Drain-Source Diode Characteristics and Maximum Ratings VSD trr QRR
NOTES: 1: Starting TJ = 25C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V. 2: Pulse width = 100s
Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge
FDA8440 Rev. A2
2
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FDA8440 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
Figure 2. Transfer Characteristics
400
100
ID,Drain Current[A]
VGS = 10.0 V 7.0 V 5.0 V 3.5 V 3.0 V 2.5 V * Notes : 1. 250s Pulse Test 2. TC = 25 C
o
100
ID,Drain Current[A]
o
150 C -55 C
o
10
10
25 C * Notes : 1. VDS = 20V 2. 250s Pulse Test
o
1
0.4 0.04
0.1 VDS,Drain-Source Voltage[V]
1
1
0
2 4 VGS,Gate-Source Voltage[V]
6
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
1.60
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
1000
RDS(ON) [m], Drain-Source On-Resistance
1.55
IS, Reverse Drain Current [A]
VGS = 4.5V
100
150 C
o
o
25 C
1.50
10
Notes: 1. VGS = 0V 2. 250s Pulse Test
VGS = 10V
1.45 0 50
* Note : TJ = 25 C
o
100 150 ID, Drain Current [A]
200
250
1 0.3
0.6 0.9 VSD, Body Diode Forward Voltage [V]
1.2
Figure 5. Capacitance Characteristics
30000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VDS = 25V VDS = 20V VDS = 15V
24000
8
Capacitances [pF]
Ciss
18000
* Note: 1. VGS = 0V 2. f = 1MHz
6
12000
Coss
4
6000
Crss
2
* Note : ID = 80A
0 -1 10
10 VDS, Drain-Source Voltage [V]
0
10
1
20
0
0
100 200 300 Qg, Total Gate Charge [nC]
400
FDA8440 Rev. A2
3
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FDA8440 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
rDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
2.5
1.1
2.0
1.5
1.0
1.0
0.9
* Notes : 1. VGS = 0V 2. ID = 250A
0.5
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.0 -100
* Notes : 1. VGS = 10V 2. ID = 80A
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Unclamped Inductive Switching Capability
200 100
IAS, AVALANCHE CURRENT(A)
ID, Drain Current [A]
Figure 10. Safe Operating Area
5000
1000
100s
o
TJ = 25 C
o
100
10
TJ = 150 C
10
Operation in This Area is Limited by R DS(on) * Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
1ms 10ms 100ms
1
1 0.01
0.1
0.1
1
10
100
1000
10000
1
tAV, TIME IN AVALANCHE(ms)
10 VDS, Drain-Source Voltage [V]
50
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05
PDM t1 t2
o
0.01
0.02 0.01 Single pulse
* Notes : 1. ZJC(t) = 0.49 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
0.001 -5 10
10
-4
10 10 Rectangular Pulse Duration [sec]
-3
-2
10
-1
10
0
FDA8440 Rev. A2
4
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FDA8440 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA8440 Rev. A2
5
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FDA8440 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDA8440 Rev. A2
6
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FDA8440 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA8440 Rev. A2
7
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FDA8440 N-Channel PowerTrench(R) MOSFET
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35
FDA8440 Rev. A2
8
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